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  • Growth Of Cigs Thin Films On Flexible Glass Substrates | TechLink
    opportunities please contact any of our Tech Managers at http techlinkcenter org about staff Patent Identifier 20140261668 An article made by sputtering molybdenum onto a flexible glass substrate and depositing a photovoltaic material on the molybdenum by sputtering thermal evaporation multi target ternary or binary sputtering or nanoparticle techniques USPTO url http appft1 uspto gov netacgi nph Parser Sect1 PTO1 Sect2 HITOFF d PG01 p 1 u Facebook Twitter Google

    Original URL path: http://techlinkcenter.org/patents/20140261668 (2016-02-10)
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  • Growth Of Cigs Thin Films On Flexible Glass Substrates | TechLink
    and related research and licensing opportunities please contact any of our Tech Managers at http techlinkcenter org about staff Patent Identifier 20140261669 An article made by depositing a bottom contact onto a flexible glass substrate and depositing a photovoltaic material on the bottom contact USPTO url http appft1 uspto gov netacgi nph Parser Sect1 PTO1 Sect2 HITOFF d PG01 p 1 u Facebook Twitter Google Plus LinkedIn Main menu Home

    Original URL path: http://techlinkcenter.org/patents/20140261669 (2016-02-10)
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  • Wet-Etchable, Sacrificial Liftoff Layer Compatible With High Temperature Processing | TechLink
    layers compatible with high temperature processing a sacrificial layer defined as consisting of a single film of one material or multiple films of multiple materials that can tolerate high temperatures is deposited on a substrate called the original substrate by sputtering or another suitable technique e g evaporation pulsed laser deposition wet chemistry etc Intermediate steps result in a lift off layer attached to the lift off substrate that allow

    Original URL path: http://techlinkcenter.org/patents/20140263171 (2016-02-10)
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  • Optically Stimulated Luminescence Dosimetry Using Doped Lithium Fluoride Crystals | TechLink
    fabricated from a thermoluminescent material a light stimulation source configured to stimulate the OSL dosimeter to produce luminescence emissions and a light detection system that measures the intensity of such luminescence emissions and converts the electrical signal to a binary string that can be processed by an appropriately programmed computer configured to analyze data from the reader and produce data indicative of an extent of radiation exposure Dose information is

    Original URL path: http://techlinkcenter.org/patents/20140264045 (2016-02-10)
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  • Neutron Detector Using Gd-Based Scintillator And Wide-Bandgap Semiconductor Photovoltaic | TechLink
    An enhanced neutron sensing device that couples a gadolinium based scintillator with at least two wide bandgap photodiodes to achieve a high sensitivity low power and portable neutron detector with high gamma discrimination Once coupled with electrical signal processing and read out electrons the device will output the incident neutron flux in the environment and can be used in locations with known sources of neutrons or for identifying clandestine nuclear

    Original URL path: http://techlinkcenter.org/patents/20140264057 (2016-02-10)
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  • Light Emitting Device On Metal Foam Substrate | TechLink
    the substrate and a metal or conductive oxide contact layer in contact with each nanowire junction opposite of the substrate More specifically a light emitting device having an electrically conductive metal foam substrate one or more light emitting nanowires in contact with the substrate a quantum well on the nanowire s a p type shell on the quantum well a metal or conductive oxide contact layer in contact with the

    Original URL path: http://techlinkcenter.org/patents/20140264261 (2016-02-10)
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  • Concentric Forster Resonance Energy Transfer Relay For The Parallel Detection Of Two Bio/physicochemical Process | TechLink
    Described herein is a Frster or fluorescence resonance energy transfer FRET configuration with three energy transfer pathways between three luminescent components where two of the energy transfer steps occur in sequence as a relay and the first step of the relay is in competition with a third energy transfer process energy transfer from the donor to the intermediary is in competition with energy transfer from the donor directly to the

    Original URL path: http://techlinkcenter.org/patents/20140264262 (2016-02-10)
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  • Strained Ingaas Quantum Wells For Complementary Transistors | TechLink
    20140264278 Categories Electronics An InGaAs n channel quantum well heterostructure for use in a complementary transistor having a Sb based p channel The heterostructure includes a buffer layer having a lattice constant intermediate that of the n and p channel materials and which is configured to accommodate the strain produced by a lattice constant mismatch between the n channel and p channel materials USPTO url http appft1 uspto gov netacgi

    Original URL path: http://techlinkcenter.org/patents/20140264278 (2016-02-10)
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